Hsinchu, Taiwan

Neng-Wei Wu

This inventor holds 6 USPTO granted patents. Top assignees: Industrial Technology Research Institute, Vanguard International Semiconductor Corporation. Active years: 1990-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Neng-Wei Wu. Retrieved from https://idiyas.com/inventor/neng-wei-wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 6

Forward Citations = 151(Granted Patents)


Location History:

  • Taipei, TW (1993)
  • Hsin-Chu, TW (1990 - 1999)

Company Filing History:


Years Active: 1990-1999

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6 patents (USPTO):Explore Patents

Title: Neng-Wei Wu: Innovator in Semiconductor Technology

Introduction

Neng-Wei Wu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced capacitor structures and field effect transistors. With a total of 6 patents to his name, Wu's work has had a substantial impact on the industry.

Latest Patents

One of Wu's latest patents is a method of forming semicrown-shaped stacked capacitors for dynamic random access memory (DRAM) devices. This innovative method involves the sequential formation of a first insulating layer, a second insulating etch-stop layer, and a high-etch-rate third insulating layer on a substrate over memory cell areas containing field-effect transistors (FETs). The process includes etching recesses in the insulating layers for bottom electrodes, aligning them over device areas, and plasma etching node contact openings to connect with the source/drain areas. A first polysilicon layer is then deposited to create node contacts and bottom electrodes. The use of a high-etch-rate fourth insulating layer fills the recesses, and both the fourth insulating layer and the first polysilicon layer are etched or polished back to form an array of bottom electrodes with oxide plugs. The final structure includes a thin dielectric layer and a patterned second polysilicon layer for top electrodes, enhancing the mechanical stability and photolithographic process window.

Another notable patent is for an offset dual gate thin film field effect transistor. This invention features a thin polycrystalline silicon layer as the channel region, with a lower gate electrode beneath the silicon layer and an upper gate electrode offset above it. The design includes gate dielectric layers between the electrodes and the silicon layer, optimizing the transistor's performance.

Career Highlights

Neng-Wei Wu has worked with several esteemed organizations throughout his career. He has been associated with the Industrial Technology Research Institute and Vanguard International Semiconductor Corporation, where he has contributed to various innovative projects in semiconductor technology.

Collaborations

Wu has collaborated with notable professionals in his field, including his coworker Wen-Doe Su. Their joint efforts have further advanced the research and development of semiconductor devices.

Conclusion

Neng-Wei Wu is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His innovative patents and

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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