The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1992
Filed:
Jul. 24, 1991
Applicant:
Inventor:
Neng-Wei Wu, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 29 ; 437 41 ; 437 44 ; 437 52 ; 148D / ;
Abstract
A process for forming a thin film field effect transistor, particularly adapted for use in SDRAM devices using CMOS flip-flop circuits, wherein the transistor has a drain-channel P-N junction that is precisely spaced from the gate electrode, the process involving the etch back of the edge of the gate electrode, either prior to ion implantation to form the source and drain, or following the implantation.