The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 1997
Filed:
Nov. 15, 1996
Mosel, Vitelic Inc., Hsinchu, TW;
Abstract
A new method of fabricating the NO capacitor dielectric layers of dynamic random access memory (DRAM) cells is disclosed. Because NH.sub.4 Cl particles are soluble (dissolvable) in deionized (DI) water, the undesired NH.sub.4 Cl particles left in the thin nitride surface of the DRAM capacitor dielectric layer can be removed by high-speed spinning the silicon wafers while spraying DI water. At the same time, this high-speed spinning step produces a charge-up effect that can also help the thin nitride layer of the DRAM capacitors eliminate these defects. High quality capacitors are then achieved, and therefore high quality DRAM cells may also be produced using this method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile