The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Jun. 12, 1996
Kuang-Chad Chen, Hsin-Chu, TW;
Tuby Tu, Hsin-Chu, TW;
Mosel Vitelic Incorporated, Hsin-Chun, TW;
Abstract
A stacked capacitor of a DRAM cell has an increased storage electrode without increasing the total area and fabrication complexity of the DRAM cell. By disposing the storage electrode of a memory capacitor on an especially made rugged stacked oxide layer, the area of the storage electrode is enlarged and thus provides the higher capacitance. Then, by removing the rugged stacked oxide layer to expose the rugged surface of the storage electrode, the capacitance of a memory capacitor is additionally increased after covering the whole rugged surface of a of the storage electrode with a dielectric film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile