The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Jan. 27, 1997
Mosel Vitelic Incorporated, , TW;
Abstract
The present invention relates to a stacked capacitor of a DRAM cell, particully remarkably increasing a surface area of a storage electrode of a stacked capacitor without increasing an occupation area and a complexity of fabrication thereof. According to the invention, by use of depositing a protection polysilicon layer on a rugged polysilicon layer, which can provide an increased surface area of a storage electrode, a chemical oxide layer underlying the rugged polysilicon layer is protected by the protection polysilicon layer during a HF dip and thus a peeling of the rugged polysilicon layer as a result of the chemical oxide loss will not occur, thereby preventing a production yield loss.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile