The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 1998

Filed:

Aug. 27, 1996
Applicant:
Inventors:

Kuang-Chao Chen, Hsin-chu, TW;

Tuby Tu, Hsin-chu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438238 ; 438763 ; 438790 ;
Abstract

The present invention relates to a rugged stacked oxide layer structure which remarkably increases an area of a subsequent deposition layer over the rugged stacked oxide layer. The enlargement of the area of a deposition layer over the rugged oxide layer enables one to ameliorate an electrical characteristic of a device and provide a higher integration density. For example, the rugged stacked oxide layer can be used to provide a higher capacitance by enlarging the area of a storage electrode of a capacitor. Similarly it can also be used to increase light absorption of a photodetector per unit area by enlarging an interfacial area of a P-N junction of the photodetector.


Find Patent Forward Citations

Chen, Kuang-Chao. (1998). Rugged stacked oxide layer structure and method of fabricating same (U.S. Patent No. 5851867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5851867

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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