Tsung-Yao Wen

This inventor holds 26 USPTO granted patents, primarily in FinFET Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Yao Wen. Retrieved from https://idiyas.com/inventor/tsung-yao-wen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 88.5

Average Co-Inventor Count = 3.5

ph-index = 7

Forward Citations = 114(Granted Patents)

Company Filing History:

26 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2023

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Areas of Expertise:

FinFET

Transistor

Semiconductor Fabrication

Epitaxial Source/Drain

Barrier Layer

Channel Mobility

Fin Structures

U-Shaped Channel

Anti-Punch Through

Device Structure

Replacement Gate Process

Fin Field Effect Transistor

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11569236 - Replacement gate process for FinFET (2023-01-31),

2. 11158508 - Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structure (2021-10-26),

3. 11037787 - Method of semiconductor device fabrication (2021-06-15),

4. 10868006 - FinFET transistor with fin back biasing (2020-12-15),

5. 10854605 - Replacement gate process for FinFET (2020-12-01),

6. 10522540 - FinFET transistor with fin back biasing (2019-12-31),

7. 10446396 - Method of semiconductor device fabrication (2019-10-15),

8. 10418363 - Replacement gate process for FinFET (2019-09-17),

9. 10276380 - Method of semiconductor device fabrication (2019-04-30),

10. 10169515 - Layout modification method and system (2019-01-01),

11. 10163902 - FinFET transistor with fin back biasing (2018-12-25),

12. 10153280 - Replacement gate process for FinFET (2018-12-11),

13. 10062688 - Semiconductor device with epitaxial source/drain (2018-08-28),

14. 9953836 - Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure (2018-04-24),

15. 9934961 - Methods for forming fin structures for semiconductor devices (2018-04-03),

Title: The Innovative Journey of Inventor Tsung-Yao Wen

Introduction:

Tsung-Yao Wen, a visionary inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations and patents.

Latest Patents:

Tsung-Yao Wen's latest patents include cutting-edge advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems, solidifying his reputation as a pioneer in the industry.

Career Highlights:

With a career spanning over two decades, Tsung-Yao Wen has held key positions in leading tech companies, where he spearheaded research and development projects that have shaped the future of various industries. His innovative mindset and dedication to pushing boundaries have led to the successful commercialization of several groundbreaking inventions.

Collaborations:

Throughout his career, Tsung-Yao Wen has collaborated with top researchers, engineers, and scientists from around the globe, fostering a culture of innovation and knowledge exchange. His collaborative efforts have resulted in the development of cutting-edge technologies that have revolutionized the way we live and work.

Conclusion:

Inventor Tsung-Yao Wen's relentless pursuit of innovation and his passion for creating solutions to complex challenges have established him as a trailblazer in the world of technology. His remarkable contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]