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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158508 B1

PDFFull Text
Date of Patent:
Oct. 26, 2021

Filed:

Mar. 12, 2018

Barrier layer above anti-punch through (apt) implant region to improve mobility of channel region of fin field effect transistor (finfet) device structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tsung-Yao Wen, Hsinchu, TW;

Sheng-Chen Wang, Hsinchu, TW;

Sai-Hooi Yeong, Zhubei, TW;

Hsueh-Chang Sung, Zhubei, TW;

Ya-Yun Cheng, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Abul Kalam

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 21/324 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/045 (2013.01); H01L 29/0653 (2013.01); H01L 29/1033 (2013.01); H01L 29/1054 (2013.01); H01L 29/1083 (2013.01); H01L 29/161 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 27/0886 (2013.01); H01L 29/785 (2013.01);
Abstract

A fin field device structure and method for forming the same are provided. The FinFET device structure includes a protruding structure extending from a substrate and an anti-punch through implant (APT) region formed in the protruding structure. The FinFET device structure includes a barrier layer formed on the APT region, and the barrier layer has a width in a horizontal direction. The width gradually tapers from a bottom of the barrier layer to a top of the barrier layer.

Find Patent Forward Citations

Wen, Tsung-Yao. (2021). Barrier layer above anti-punch through (apt) implant region to improve mobility of channel region of fin field effect transistor (finfet) device structure (U.S. Patent No. 11158508). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11158508

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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