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Danvers, MA, United States of America

Tsung-Liang Chen

This inventor holds 18 USPTO granted patents and 1 published patent application. Top assignees: Varian Semiconductor Equipment Associates, Inc., Globalfoundries Inc., Applied Materials, Inc.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Liang Chen. Retrieved from https://idiyas.com/inventor/tsung-liang-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 55.6

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 49(Granted Patents)


Location History:

  • Cohoes, NY (US) (2014 - 2016)
  • Hamilton, MA (US) (2019)
  • Danvers, MA (US) (2016 - 2020)

Company Filing History:

goldMedal9 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents
silverMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 14,433 
 
Applied Materials, Inc.
 patents
4. 1 out of 834,453 
Other
 patents

Years Active: 2014-2026

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18 patents (USPTO):Explore Patents
1. 12591805 - Equipment parameter management at a manufacturing system using machine learning (2026-03-31),
2. 10665421 - In-situ beam profile metrology (2020-05-26),
3. 10633743 - System and method for controllable non-volatile metal removal (2020-04-28),
4. 10312432 - Magnetic memory device and techniques for forming (2019-06-04),
5. 10113229 - Techniques for controlling ion/neutral ratio of a plasma source (2018-10-30),
6. 10004133 - Apparatus and techniques to treat substrates using directional plasma and reactive gas (2018-06-19),
7. 10000853 - System and method for controllable non-volatile metal removal (2018-06-19),
8. 9997351 - Apparatus and techniques for filling a cavity using angled ion beam (2018-06-12),
9. 9706634 - Apparatus and techniques to treat substrates using directional plasma and reactive gas (2017-07-11),
10. 9611552 - System and method for controllable non-volatile metal removal (2017-04-04),
11. 9520284 - Ion beam activated directional deposition (2016-12-13),
12. 9418832 - Method of forming a dielectric film (2016-08-16),
13. 9349814 - Gate height uniformity in semiconductor devices (2016-05-24),
14. 9257516 - Reduction of oxide recesses for gate height control (2016-02-09),
15. 9093560 - Gate height uniformity in semiconductor devices (2015-07-28),

Title: The Innovative Journey of Tsung-Liang Chen

Introduction:

Tsung-Liang Chen, a talented inventor based in Danvers, MA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Chen's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we approach transportation technology.

Career Highlights:

With a career spanning over two decades, Tsung-Liang Chen has worked with leading tech companies to develop state-of-the-art solutions in robotics, machine learning, and renewable energy technologies. His innovative spirit and dedication to pushing the boundaries of what is possible have earned him recognition as a pioneer in the industry.

Collaborations:

Throughout his career, Chen has collaborated with top researchers and engineers from renowned universities and research institutions, fostering a culture of innovation and excellence in all his projects. His ability to work seamlessly in multidisciplinary teams has led to the successful implementation of groundbreaking technologies.

Conclusion:

In conclusion, Tsung-Liang Chen's passion for innovation and his relentless drive to create a better future through technology make him a true visionary in the world of inventions. His work continues to inspire and shape the technological landscape, leaving a lasting impact on generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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