The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Nov. 13, 2015
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Tsung-Liang Chen, Danvers, MA (US);
Mark Saly, Santa Clara, CA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Approaches herein provide precise areal surface reaction with directional ion beam activation. Exemplary approaches include selectively forming a material within a trench of a semiconductor device using a plurality of successive deposition and activation cycles. Each of the plurality of deposition and activation cycles includes forming a precursor conformally along a set of surfaces of the trench, reacting the precursor with a capping compound to form a capping layer along the set of surfaces of the trench, and performing an ion implant to the semiconductor device to activate just a portion of the capping layer. In one approach, the ion implant activates just a portion of the capping layer along a bottom surface of the trench. In another approach, the ion implant activates just a portion of the capping layer along an upper section of a sidewall of the trench.