The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Jul. 07, 2017
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Shurong Liang, Poughkeepsie, NY (US);

Costel Biloiu, Rockport, MA (US);

Glen F. R. Gilchrist, Danvers, MA (US);

Vikram Singh, Andover, MA (US);

Christopher Campbell, Newburyport, MA (US);

Richard Hertel, Boxford, MA (US);

Alexander Kontos, Beverly, MA (US);

Piero Sferlazzo, Marblehead, MA (US);

Tsung-Liang Chen, Danvers, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H05H 1/24 (2006.01); H01L 21/308 (2006.01); H01L 21/66 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H05H 1/24 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01J 37/32357 (2013.01); H01J 37/32834 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01J 2237/327 (2013.01);
Abstract

An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.


Find Patent Forward Citations

Loading…