The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Oct. 10, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tsung-Liang Chen, Danvers, MA (US);

Kevin R. Anglin, Somerville, MA (US);

Simon Ruffell, Hamilton, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01); H01J 37/08 (2006.01); H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); H01J 37/20 (2013.01); H01J 2237/24564 (2013.01);
Abstract

A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.


Find Patent Forward Citations

Loading…