The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Feb. 18, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hung-Wei Liu, Irvine, CA (US);
Tsung-Liang Chen, Danvers, MA (US);
Huang Liu, Mechanicville, NY (US);
Zhiguo Sun, Halfmoon, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02112 (2013.01); H01L 21/0228 (2013.01); H01L 21/02129 (2013.01); H01L 21/02131 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02337 (2013.01); H01L 21/76837 (2013.01);
Abstract
A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.