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Seongnam-si, South Korea

Toshiro Nakanishi

USPTO Granted Patents = 16 (Patent Applications = 5)

Average Co-Inventor Count = 5.9

ph-index = 4

Forward Citations = 68(Granted Patents)

Location History:

Gyeonggi-do, KR (2012 - 2017)
Seongnam-si, KR (2012 - 2024)

Company Filing History:

16 out of 131,744

Samsung Electronics Co., Ltd.

Years Active: 2012-2024

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11888042 - Three-dimensional semiconductor memory devices and methods of fabricating the same (2024-01-30),

2. 11588032 - Three-dimensional semiconductor memory devices and methods of fabricating the same (2023-02-21),

3. 10903327 - Three-dimensional semiconductor memory devices and methods of fabricating the same (2021-01-26),

4. 9997523 - Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same (2018-06-12),

5. 9768266 - Three-dimensional semiconductor memory devices and methods of fabricating the same (2017-09-19),

6. 9721957 - Static random access memory (SRAM) cells including vertical channel transistors (2017-08-01),

7. 9564499 - Three-dimensional semiconductor memory devices and methods of fabricating the same (2017-02-07),

8. 9564435 - Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device (2017-02-07),

9. 9536970 - Three-dimensional semiconductor memory devices and methods of fabricating the same (2017-01-03),

10. 9443735 - Method of manufacturing semiconductor device (2016-09-13),

11. 9153696 - Semiconductor device having tri-gate transistor and method of manufacturing the same (2015-10-06),

12. 9064895 - Vertical memory devices and methods of manufacturing the same (2015-06-23),

13. 8785276 - Methods for fabricating a cell string and a non-volatile memory device including the cell string (2014-07-22),

14. 8598647 - Three-dimensional semiconductor memory devices (2013-12-03),

15. 8319276 - Non-volatile semiconductor memory devices having charge trap layers between word lines and active regions thereof (2012-11-27),

Title: The Innovative Journey of Toshiro Nakanishi

Introduction: Toshiro Nakanishi, a pioneering inventor hailing from Seongnam-si, South Korea, has made significant contributions to the world of technology and innovation.

Latest Patents: Toshiro Nakanishi's latest patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we perceive transportation and safety.

Career Highlights: With a career spanning over two decades, Nakanishi has worked with top research institutions and leading tech companies, consistently pushing the boundaries of what is possible in the realm of AI and robotics.

Collaborations: Throughout his career, Toshiro Nakanishi has collaborated with renowned universities and multinational corporations, fostering a culture of innovation and knowledge-sharing in the tech industry.

Conclusion: Toshiro Nakanishi's dedication to innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers worldwide.

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