The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jul. 28, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jin Soak Kim, Seoul, KR;
Gab Jin Nam, Seoul, KR;
Dong Hwan Kim, Suwon-si, KR;
Su Hwan Kim, Seoul, KR;
Toshiro Nakanishi, Seongnam-si, KR;
Sung Kweon Baek, Hwaseong-si, KR;
Tae Hyun An, Seoul, KR;
Eun Ae Chung, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28185 (2013.01); H01L 29/518 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01);
Abstract
There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).