The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Dec. 08, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Toshiro Nakanishi, Seongnam-si, KR;
Donghwan Kim, Suwon-si, KR;
Suhwan Kim, Seoul, KR;
Yubin Kim, Suwon-si, KR;
Jin Soak Kim, Seoul, KR;
Gabjin Nam, Seoul, KR;
Sungkweon Baek, Hwaseong-si, KR;
Taehyun An, Seoul, KR;
Eunae Chung, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 51/057 (2013.01); H01L 51/0575 (2013.01); H01L 51/0048 (2013.01);
Abstract
A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.