The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Feb. 27, 2014
Tae-hyun an, Seoul, KR;
Toshiro Nakanishi, Seongnam-si, KR;
Gab-jin Nam, Seoul, KR;
Jong-ho Lee, Hwaseong-si, KR;
Tae-Hyun An, Seoul, KR;
Toshiro Nakanishi, Seongnam-si, KR;
Gab-Jin Nam, Seoul, KR;
Jong-Ho Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate including an NMOS region, a fin active region protruding from the substrate in the NMOS region, the fin active region including an upper surface and a sidewall, a gate dielectric layer on the upper surface and the sidewall of the fin active region, a first metal gate electrode on the gate dielectric layer, the first metal gate electrode having a first thickness at the upper surface of the fin active region and a second thickness at the sidewall of the fin active region, and a second metal gate electrode on the first metal gate electrode, the second metal gate electrode having a third thickness at the upper surface of the fin active region and a fourth thickness at the sidewall of the fin active region, wherein the third thickness is less than the fourth thickness.