Company Filing History:
Years Active: 2008-2017
Title: The Innovations of Tae-Hyun An
Introduction
Tae-Hyun An is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the development of advanced semiconductor devices and methods for their fabrication.
Latest Patents
One of his latest patents is titled "Semiconductor devices and methods of fabricating the same." This patent describes semiconductor devices that include a fin disposed on a substrate, featuring an insulating layer pattern on the fin's top surface. Additionally, it includes a wire pattern on the insulating layer pattern, which is separated from it, along with a gate electrode that surrounds the wire pattern.
Another notable patent is "Semiconductor device having tri-gate transistor and method of manufacturing the same." This invention involves a semiconductor device that comprises a substrate with an NMOS region and a fin active region protruding from the substrate. The fin active region includes a gate dielectric layer and multiple metal gate electrodes with varying thicknesses, enhancing the device's performance.
Career Highlights
Tae-Hyun An is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the company's innovative product lineup.
Collaborations
Throughout his career, Tae-Hyun An has collaborated with notable colleagues, including Gab-Jin Nam and Toshiro Nakanishi. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.
Conclusion
Tae-Hyun An's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor devices.