The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Mar. 16, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Tae-Hyun An, Seoul, KR;
Gab-Jin Nam, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/42356 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
Semiconductor devices and methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a fin disposed on a substrate. The fin may include an insulating layer pattern disposed in a top surface of the fin. The semiconductor devices may also include a wire pattern disposed on the insulating layer pattern to be separated from the insulating layer pattern and a gate electrode surrounding the wire pattern.