The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Nov. 08, 2011
Dongwoo Kim, Incheon, KR;
Toshiro Nakanishi, Seongnam-si, KR;
Seunghyun Lim, Yongin-si, KR;
Bio Kim, Seoul, KR;
Kihyun Hwang, Seongnam-si, KR;
Jaeyoung Ahn, Seongnam-si, KR;
Dongwoo Kim, Incheon, KR;
Toshiro Nakanishi, Seongnam-si, KR;
SeungHyun Lim, Yongin-si, KR;
Bio Kim, Seoul, KR;
Kihyun Hwang, Seongnam-si, KR;
Jaeyoung Ahn, Seongnam-si, KR;
Abstract
Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.