Nishio, Japan

Toshio Sakakibara

This inventor holds 23 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Denso Corporation, Nippondenso Co., Ltd., Hitachi, Ltd.. Active years: 1988-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshio Sakakibara. Retrieved from https://idiyas.com/inventor/toshio-sakakibara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 73.9


Average Co-Inventor Count = 4.2

ph-index = 13

Forward Citations = 827(Granted Patents)


Company Filing History:


Years Active: 1988-2010

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Areas of Expertise:
Silicon Carbide
Power MOS Transistor
Vertical Field Effect Transistor
Epitaxial Film
Thin Film Resistor
High Withstand Voltage
Isolation Region
Non-volatile Memory
Dielectric Isolation
Trench Filling
Doping Levels
Semiconductor Fabrication
23 patents (USPTO):Explore Patents

Title: Toshio Sakakibara - The Innovative Mind from Nishio

Introduction: Toshio Sakakibara is a renowned inventor hailing from Nishio, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sakakibara's recent patents include advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to creating a better future through innovation.

Career Highlights: Throughout his illustrious career, Sakakibara has received numerous accolades for his inventive spirit and has been instrumental in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Sakakibara has collaborated with leading research institutions, universities, and tech companies worldwide, fostering a culture of innovation and knowledge-sharing to drive progress in the field of technology.

Conclusion: Toshio Sakakibara's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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