The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Sep. 05, 2001
Yasuhiro Kitamura, Chiryu, JP;
Toshio Sakakibara, Nishio, JP;
Kenji Kohno, Gifu, JP;
Shoji Mizuno, Okazaki, JP;
Yoshiaki Nakayama, Okazaki, JP;
Hiroshi Maeda, Kariya, JP;
Makio Iida, Ichinomiya, JP;
Hiroshi Fujimoto, Nagoya, JP;
Mitsuhiro Saitou, Oobu, JP;
Hiroshi Imai, Kariya, JP;
Hiroyuki Ban, Aichi-ken, JP;
DENSO Corporation, Kariya, JP;
Abstract
A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.