The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Oct. 16, 2000
Hitoshi Yamaguchi, Obu, JP;
Toshio Sakakibara, Nishio, JP;
Jun Sakakibara, Anjo, JP;
Takumi Shibata, Kariya, JP;
Toshiyuki Morishita, Iwakura, JP;
Denso Corporation, Kariya, JP;
Abstract
In a semiconductor device, a p-type base region is provided in an n -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n -type source region extends in the p-type base region from the principal surface in the perpendicular direction, and an n -type drain region extends in the substrate separately from the p-type base region with a drift region interposed therebetween. A trench is formed to penetrate the p-type base region from the n -type source region in a direction parallel to the principal surface. A gate electrode is formed in the trench through a gate insulating film. Accordingly, a channel region can be formed with a channel width in a depth direction of the trench when a voltage is applied to the gate electrode.