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For the Inventor, By the Inventor

Anjo, Japan

Jun Sakakibara

This inventor holds 20 USPTO granted patents and 1 EPO patent, primarily in Silicon Carbide Semiconductors. Top assignees: Denso Corporation, Denso Corpora Tion, Nippondenso Co., Ltd.. Active years: 1998-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Sakakibara. Retrieved from https://idiyas.com/inventor/jun-sakakibara-jkheli2t

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 55.0


Average Co-Inventor Count = 2.8

ph-index = 9

Forward Citations = 690(Granted Patents)


Location History:

  • Anjo, JP (1999 - 2011)
  • Nagoya, JP (2010 - 2016)
  • Kariya, JP (1998 - 2019)

Company Filing History:

goldMedal17 out of 20,436 
 
Denso Corporation
 patents
silverMedal2 out of 240 
 
Denso Corpora Tion
 patents
bronzeMedal1 out of 3,252 
 
Nippondenso Co., Ltd.
 patents
4. 1 out of 38,970 
 
Toyota Jidosha Kabushiki Kaisha
 patents
where one patent can have more than one assignee

Years Active: 1998-2019

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Schottky Barrier Diode
Super Junction
MOS Transistor
High Breakdown Voltage
Epitaxially-Filled Trench
Integrated Circuit
Switching Element
Free Wheel Diode
P-N Column Portion
Resistive Element
20 patents (USPTO):Explore Patents
1. 10374079 - Silicon carbide semiconductor device and method for manufacturing same (2019-08-06),
2. 9954073 - Method for manufacturing silicon carbide semiconductor device (2018-04-24),
3. 9515067 - Semiconductor device having switching element and free wheel diode and method for controlling the same (2016-12-06),
4. 8890252 - Semiconductor device having switching element and free wheel diode and method for controlling the same (2014-11-18),
5. 7968953 - Semiconductor device including schottky barrier diode and method of manufacturing the same (2011-06-28),
6. 7928470 - Semiconductor device having super junction MOS transistor and method for manufacturing the same (2011-04-19),
7. 7859048 - Semiconductor device having super junction (2010-12-28),
8. 7838995 - Semiconductor device having p-n column portion (2010-11-23),
9. 7564095 - Semiconductor device and method for manufacturing the same (2009-07-21),
10. 7553722 - Semiconductor device and method for manufacturing the same (2009-06-30),
11. 6972458 - Horizontal MOS transistor (2005-12-06),
12. 6867456 - Semiconductor device having high breakdown voltage without increased on resistance (2005-03-15),
13. 6836001 - Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench (2004-12-28),
14. 6696323 - Method of manufacturing semiconductor device having trench filled up with gate electrode (2004-02-24),
15. 6670673 - Semiconductor device and method for manufacturing semiconductor device (2003-12-30),

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Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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