The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Jan. 14, 2015
Denso Corporation, Kariya, Aichi-pref., JP;
Nozomu Akagi, Kariya, JP;
Jun Sakakibara, Kariya, JP;
Shoji Mizuno, Kariya, JP;
Yuichi Takeuchi, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method for manufacturing a SiC semiconductor device includes: forming recesses to be separated from each other on a cross section in parallel to a surface of the substrate by partially removing a top portion of the drift layer with etching using a mask after arranging the mask on a front surface of a drift layer; forming electric field relaxation layers having the second conductivity type to be separated from each other on the cross section by ion-implanting a second conductivity type impurity on a bottom of each recess using the mask; and forming a channel layer by forming a second conductivity type layer on the front surface of the drift layer including a front surface of each electric field relaxation layer in a respective recess.