The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Sep. 08, 2015
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Hirotaka Saikaku, Kariya, JP;
Jun Sakakibara, Kariya, JP;
Shoji Mizuno, Kariya, JP;
Yuichi Takeuchi, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
A silicon carbide semiconductor device includes: a substrate; a drift layer over the substrate; a base region over the drift layer; multiple source regions over an upper layer portion of the base region; a contact region over the upper layer portion of the base region between opposing source regions; multiple trenches from a surface of each source region to a depth deeper than the base region; a gate electrode on a gate insulating film in each trench; a source electrode electrically connected to the source regions and the contact region; a drain electrode over a rear surface of the substrate; and multiple electric field relaxation layers in the drift layer between adjacent trenches. Each electric field relaxation layer includes: a first region at a position deeper than the trenches; and a second region from a surface of the drift layer to the first region.