The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Dec. 09, 2003
Naohiro Suzuki, Anjo, JP;
Jun Sakakibara, Anjo, JP;
Yoshitaka Noda, Bisai, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Naohiro Suzuki, Anjo, JP;
Jun Sakakibara, Anjo, JP;
Yoshitaka Noda, Bisai, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Denso Corporation, Kariya, JP;
Abstract
A semiconductor device includes a base P region, a source Nregion, and a drain Nregion formed in a surface layer portion on a principal surface in an Nsilicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain Nregion in a region including the drain Nregion and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain Nregion from the source Nregion as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.