The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Aug. 18, 2005
Takasumi Ohyanagi, Hitachinaka, JP;
Atsuo Watanabe, Hitachiota, JP;
Toshio Sakakibara, Nishio, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Hiroki Nakamura, Handa, JP;
Takasumi Ohyanagi, Hitachinaka, JP;
Atsuo Watanabe, Hitachiota, JP;
Toshio Sakakibara, Nishio, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Hiroki Nakamura, Handa, JP;
Hitachi, Ltd., Tokyo, JP;
Denso Corporation, Aichi, JP;
Abstract
A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.