Takasumi Ohyanagi

This inventor holds 13 USPTO granted patents, primarily in Silicon Carbide Semiconductors. Top assignees: Hitachi, Ltd., Denso Corporation. Active years: 2002-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takasumi Ohyanagi. Retrieved from https://idiyas.com/inventor/takasumi-ohyanagi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 13

% Patents Active = 53.8

Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 391(Granted Patents)

Location History:

Tokyo, JP (2002)
Hamura, JP (2003)
Hitachi, JP (2004 - 2006)
Hitachinaka, JP (2007 - 2010)

Company Filing History:

where one patent can have more than one assignee

Years Active: 2002-2010

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Areas of Expertise:

Silicon Carbide

Semiconductor Device

Field Effect Transistor

Vertical Field Effect Transistor

Power Semiconductor

SOI Device

Plasma Display Panel

Insulated Gate

Bipolar Transistor

Manufacturing Method

Metal Conductor

Trenches

13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7763504 - Method for manufacturing silicon carbide semiconductor device (2010-07-27),

2. 7663181 - Semiconductor device (2010-02-16),

3. 7355207 - Silicon carbide semiconductor device and method for manufacturing the same (2008-04-08),

4. 7335928 - Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove (2008-02-26),

5. 7307313 - Semiconductor device including a vertical field effect transistor, having trenches, and a diode (2007-12-11),

6. 7230283 - Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove (2007-06-12),

7. 7067878 - Field effect transistor (2006-06-27),

8. 6909155 - Semiconductor on insulator device (2005-06-21),

9. 6885067 - SOI semiconductor device (2005-04-26),

10. 6750513 - Semiconductor device for driving plasma display panel (2004-06-15),

11. 6657257 - Insulated gate field effect transistor and semiconductor integrated circuit (2003-12-02),

12. 6570240 - Semiconductor device having a lateral bipolar transistor and method of manufacturing same (2003-05-27),

13. 6498368 - Power semiconductor device (2002-12-24),

Title: The Inventor Profile: Takasumi Ohyanagi

Introduction:

Takasumi Ohyanagi, a prolific inventor based in Hitachinaka, Japan, has made significant contributions to the field of semiconductor devices. With 13 patents to his name, Ohyanagi's innovative techniques have advanced the manufacturing processes of silicon carbide semiconductor devices, demonstrating his expertise in this specialized area.

Latest Patents:

Ohyanagi's recent patents showcase his expertise in semiconductor technology. One notable patent is the "Method for manufacturing silicon carbide semiconductor device," which details a novel approach to fabricating semiconductor devices using silicon carbide substrates. His patent for a "Semiconductor device" highlights his contributions to the design and structure of vertical field-effect transistors, emphasizing efficiency and performance in semiconductor technology.

Career Highlights:

With a career spanning across renowned companies such as Hitachi, Ltd. and Denso Corporation, Ohyanagi has honed his skills and expertise in semiconductor research and development. His experience in these esteemed organizations has provided him with the platform to innovate and excel in the field of semiconductor technology.

Collaborations:

During his career, Ohyanagi has collaborated with esteemed professionals such as Atsuo Watanabe and Tsuyoshi Yamamoto. These collaborations have enriched his research endeavors and have led to the development of groundbreaking technologies in semiconductor devices. Working alongside such accomplished peers has undoubtedly influenced Ohyanagi's innovative approach to his inventions.

Conclusion:

In conclusion, Takasumi Ohyanagi stands out as a pioneering figure in the realm of semiconductor technology, with a proven track record of innovation and expertise. His patents and contributions to the field exemplify his commitment to advancing semiconductor devices, making him a respected inventor in the industry. Ohyanagi's dedication to pushing the boundaries of technology continues to inspire future generations of innovators in the field of semiconductor research and development.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]