The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Apr. 09, 2001
Takasumi Ohyanagi, Hamura, JP;
Atsuo Watanabe, Hitachiohta, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
According to the present invention, there is provided an N-type insulated gate field effect transistor using an SOI substrate of which Si layer as a device formation area is N-type. The SOI substrate provided as the device formation area has the N-type semiconductor region, which has an impurity concentration higher than the impurity concentration of the device formation area, formed so that the N-type semiconductor region is contacted to a part of a gate insulating film and a field silicon oxide film formed between a source electrode and a drain electrode, and extends to be contacted to the N-type semiconductor diffusion layer contacted to the drain electrode. According to the above arrangement, the on-state breakdown can be remarkably improved.