The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Aug. 18, 2005
Takasumi Ohyanagi, Hitachinaka, JP;
Atsuo Watanabe, Hitachiota, JP;
Toshio Sakakibara, Nishio, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Hiroki Nakamura, Handa, JP;
Rajesh Kumar Malhan, Nagoya, JP;
Takasumi Ohyanagi, Hitachinaka, JP;
Atsuo Watanabe, Hitachiota, JP;
Toshio Sakakibara, Nishio, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Hiroki Nakamura, Handa, JP;
Rajesh Kumar Malhan, Nagoya, JP;
Hitachi, Ltd., Tokyo, JP;
Denso Corporation, Kariya-Shi, JP;
Abstract
A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.