The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
May. 24, 2005
Rajesh Kumar, Nagoya, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Hiroki Nakamura, Handa, JP;
Toshiyuki Morishita, Nagoya, JP;
Takasumi Ohyanagi, Hitachinaka, JP;
Atsuo Watanabe, Hitachiota, JP;
Rajesh Kumar, Nagoya, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Hiroki Nakamura, Handa, JP;
Toshiyuki Morishita, Nagoya, JP;
Takasumi Ohyanagi, Hitachinaka, JP;
Atsuo Watanabe, Hitachiota, JP;
DENSO CORPORATION, Kariya, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.