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For the Inventor, By the Inventor

Nagoya, Japan

Rajesh Kumar

This inventor holds 19 USPTO granted patents, primarily in Silicon Carbide Semiconductors. Top assignees: Denso Corporation, Hitachi, Ltd., Denson Corporation. Active years: 2000-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rajesh Kumar. Retrieved from https://idiyas.com/inventor/rajesh-kumar-29bjuc17

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19

% Patents Active = 73.7

Average Co-Inventor Count = 3.9

ph-index = 10

Forward Citations = 578(Granted Patents)


Location History:

  • Nagoya, JP (2005 - 2010)
  • Kariya, JP (2000 - 2012)

Company Filing History:

goldMedal18 out of 20,436 
 
Denso Corporation
 patents
silverMedal2 out of 42,740 
 
Hitachi, Ltd.
 patents
bronzeMedal1 out of 14 
 
Denson Corporation
 patents
where one patent can have more than one assignee

Years Active: 2000-2012

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Junction Field Effect Transistor
Manufacturing Method
Power Device
Gate Wiring Layout
Protective Diode
Active Ion Species
Inactive Ion Species
19 patents (USPTO):Explore Patents
1. RE43840 - Silicon carbide semiconductor device (2012-12-03),
2. 7821013 - Silicon carbide semiconductor device (2010-10-26),
3. 7763504 - Method for manufacturing silicon carbide semiconductor device (2010-07-27),
4. 7691694 - Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same (2010-04-06),
5. 7485509 - Semiconductor device provided by silicon carbide substrate and method for manufacturing the same (2009-02-03),
6. 7355207 - Silicon carbide semiconductor device and method for manufacturing the same (2008-04-08),
7. 7230275 - Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same (2007-06-12),
8. 7173284 - Silicon carbide semiconductor device and manufacturing method (2007-02-06),
9. 7164154 - Gate wiring layout for silicon-carbide-based junction field effect transistor (2007-01-16),
10. 7154130 - Semiconductor device provided by silicon carbide substrate and method for manufacturing the same (2006-12-26),
11. 7005678 - Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same (2006-02-28),
12. 6855981 - Silicon carbide power device having protective diode (2005-02-15),
13. 6853006 - Silicon carbide semiconductor device (2005-02-08),
14. 6576929 - Silicon carbide semiconductor device and manufacturing method (2003-06-10),
15. 6573534 - Silicon carbide semiconductor device (2003-06-03),

Title: Inventor Rajesh Kumar: Pioneering Innovations in Nagoya

Introduction: Rajesh Kumar is a visionary inventor based in Nagoya, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Rajesh Kumar holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse expertise and innovative mindset.

Career Highlights: With over two decades of experience in research and development, Rajesh Kumar has led numerous successful projects that have resulted in cutting-edge inventions with real-world applications.

Collaborations: Throughout his career, Rajesh Kumar has collaborated with leading universities, research institutions, and multinational companies, fostering a culture of innovation and knowledge sharing.

Conclusion: Rajesh Kumar's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and researchers in Nagoya and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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