The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Aug. 10, 2006
Rajesh Kumar, Nagoya, JP;
Yuichi Takeuchi, Obu, JP;
Mitsuhiro Kataoka, Nisshin, JP;
Suhail Rashid Jeremy, Cambridge, GB;
Andrei Mihaila, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Rajesh Kumar, Nagoya, JP;
Yuichi Takeuchi, Obu, JP;
Mitsuhiro Kataoka, Nisshin, JP;
Suhail Rashid Jeremy, Cambridge, GB;
Andrei Mihaila, Cambridge, GB;
Florin Udrea, Cambridge, GB;
DENSO CORPORATION, Kariya, JP;
Abstract
A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.