The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jul. 31, 2003
Applicants:
Mitsuhiro Kataoka, Nisshin, JP;
Yuuichi Takeuchi, Obu, JP;
Masami Naito, Inazawa, JP;
Rajesh Kumar, Nagoya, JP;
Hiroyuki Matsunami, Yawata, JP;
Tsunenobu Kimoto, Kyoto, JP;
Inventors:
Mitsuhiro Kataoka, Nisshin, JP;
Yuuichi Takeuchi, Obu, JP;
Masami Naito, Inazawa, JP;
Rajesh Kumar, Nagoya, JP;
Hiroyuki Matsunami, Yawata, JP;
Tsunenobu Kimoto, Kyoto, JP;
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L031/312 ;
U.S. Cl.
CPC ...
Abstract
A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.