The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Apr. 29, 1999
Akihiko Teshigahara, Nisshin, JP;
Akiyoshi Asai, Aichi-gun, JP;
Kunihiro Onoda, Nagoya, JP;
Hiroyasu Itou, Nagoya, JP;
Ryuichirou Abe, Nagoya, JP;
Toshio Sakakibara, Nishio, JP;
Denso Corporation, Kariya, JP;
Abstract
An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively provided on the source and the drain regions. An annular auxiliary electrode is formed with the source electrode to extend over the trench. Accordingly, a voltage applied to the source electrode can be applied to the auxiliary electrode, so that electric field concentration between the buffer region and the source electrode is relaxed.