Yokohama, Japan

Tomoharu Tanaka

USPTO Granted Patents = 326 

 

Average Co-Inventor Count = 2.4

ph-index = 55

Forward Citations = 12,810(Granted Patents)

Forward Citations (Not Self Cited) = 10,981(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa-ken, JP (1999)
  • Minato-ku, Tokyo JP (2003)
  • Yokohami, JP (2012)
  • Tokyo, JP (2008 - 2017)
  • Yokohama-shi, JP (2019)
  • Yokohama, JP (1991 - 2024)
  • Kanagawa, JP (1995 - 2024)

Company Filing History:


Years Active: 1991-2025

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Areas of Expertise:
Capacitive Sensing
Microelectronic Devices
3D Nand Flash Memory
Memory Device Programming
Data Retention Recovery
Split-Gate Memory Cells
Non-Volatile Semiconductor Memory
Multi-Valued Data Storage
Memory Refresh Operations
Adaptive Pre-Read Management
Current Monitoring In Semiconductors
Encoding And Decoding Data Bits
326 patents (USPTO):Explore Patents

Tomoharu Tanaka: A Trailblazer in Semiconductor Packages and Microelectronic Devices

Introduction:

Meet Tomoharu Tanaka, an extraordinary inventor and technological visionary hailing from Yokohama, Japan. With an impressive arsenal of 299 patents to his name, Tanaka has left an indelible mark on the fields of semiconductor packages and microelectronic devices. From his groundbreaking work in current monitoring within semiconductor packages to his contributions in the design of innovative memory devices and electronic systems, Tanaka has proven himself to be at the forefront of technological advancements.

Latest Patents:

One of Tanaka's notable recent patents involves current monitoring in semiconductor packages. The invention incorporates an external power supply node, a current monitoring node, and multiple semiconductor dies. Within each semiconductor die, there are two circuits - one responsible for supplying a first operating current and another designed to measure and output this current to the current monitoring node. This technology enables the summation of the measured first operating currents from all the semiconductor dies on the current monitoring node, thereby facilitating efficient monitoring and control of current flow.

Additionally, Tanaka has made significant contributions to the advancement of microelectronic devices, memory devices, and electronic systems. His patent showcases the implementation of local digit line structures, global digit line structures, source line structures, sense transistors, read transistors, and write transistors for enhanced performance. These innovations aim to optimize memory cell functionality, improve reading and writing processes, and enhance overall electronic system capabilities.

Career Highlights:

Having worked in esteemed companies such as Kabushiki Kaisha Toshiba and SanDisk Technologies Inc., Tanaka has had the opportunity to refine his expertise and contribute to cutting-edge projects in the semiconductor industry. These experiences have given him the platform to innovate and push the boundaries of technological advancements in his field.

Collaborations:

Throughout his career, Tanaka has collaborated with remarkable individuals who share his passion for innovation. Notably, he has worked alongside esteemed colleagues such as Noboru Shibata and Ken Takeuchi. These collaborations have yielded fruitful results, driving forward advancements and unlocking new possibilities within the realm of semiconductor packages and microelectronic devices.

Conclusion:

Tomoharu Tanaka's exceptional track record of 299 patents stands as a testament to his ingenuity and relentless pursuit of technological innovation. With his recent patents in current monitoring and microelectronic devices, Tanaka has displayed a commitment to enhancing the functionality and efficiency of semiconductor packages. His collaborations with brilliant minds in the industry further demonstrate his dedication to pushing the boundaries of what is possible. As the world of technology continues to evolve, we eagerly anticipate the future inventions and contributions that Tanaka will undoubtedly bring forth.

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