The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Oct. 20, 2022
Micron Technology, Inc., Boise, ID (US);
Tomoharu Tanaka, Yokohama, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory device includes an array of memory cells associated with wordlines and control logic. The control logic performs operations that cause a corrective read operation to be performed at a selected memory cell. The operations include: causing a first voltage to be applied to a first wordline associated with the selected memory cell; causing a second voltage, having a lower magnitude than the first voltage, to be applied to wordlines adjacent to the first wordline and associated with each of two neighbor memory cells of the selected memory cell; in response to determining that current flows through the two neighbor memory cells and the selected memory cell between a bitline and a source line of the array, identifying a first corrective read voltage; and causing the first corrective read voltage to be applied to the first wordline during a read operation for the selected memory cell.