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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Ting-Chang Chang

This inventor holds 69 USPTO granted patents and 8 published patent applications, primarily in Resistive Memory Technology (CPC class H01L). Top assignees: United Microelectronics Corp., National Sun Yat-Sen University of Kaohsiung, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ting-Chang Chang. Retrieved from https://idiyas.com/inventor/ting-chang-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 69 

% Patents Active = 78.3

Average Co-Inventor Count = 3.5

ph-index = 12

Forward Citations = 920(Granted Patents)

Forward Citations (Not Self Cited) = 910(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taipei Hsien, TW (2011 - 2013)
  • Hsinchu, TW (1999 - 2018)
  • Kaohsiung, TW (2005 - 2022)

Company Filing History:

goldMedal25 out of 7,269 
 
United Microelectronics Corp.
 patents
silverMedal22 out of 283 
 
National Sun Yat-Sen University of Kaohsiung
 patents
bronzeMedal7 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
4. 6 out of 1,847 
 
Acer Inc.
 patents
5. 5 out of 4,577 
 
Au Optronics Corporation
 patents
6. 1 out of 9,303 
 
Industrial Technology Research Institute
 patents
7. 1 out of 1,248 
 
Merck Patent Gesellschaft MIT Beschrankter Haftung
 patents
8. 1 out of 544 
 
National Science Council
 patents
9. 1 out of 834,453 
Other
 patents

Years Active: 1999-2025

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Areas of Expertise:
Resistive Random Access Memory
High Electron Mobility Transistor
Thin Film Transistor
Gas Detection Module
Ultraviolet Light Emitting Diode
Nonvolatile Memory
MOSFET
Biomedical Material Processing
Supercritical Fluid
Luminous Intensity
Dual-Gate Transistor
Pixel Structure
69 patents (USPTO):Explore Patents
1. 12218230 - P-GaN high-electron-mobility transistor (2025-02-04),
2. 11417511 - Method for drying wafer at room temperature (2022-08-16),
3. 11289592 - Structure to increase breakdown voltage of high electron mobility transistor (2022-03-29),
4. 11191873 - Method for processing a biomedical material by a supercritical fluid (2021-12-07),
5. 11101141 - Method for reducing defects of electronic components by a supercritical fluid (2021-08-24),
6. 10792904 - Method for bonding one component to another component (2020-10-06),
7. 10702845 - Reaction method with homogeneous-phase supercritical fluid (2020-07-07),
8. 10461252 - Resistive random access memory (2019-10-29),
9. 10283702 - Methods for resistive random access memory (RRAM) (2019-05-07),
10. 10274471 - Gas detection module and gas sensor thereof (2019-04-30),
11. 10062789 - Thin film transistor and operating method thereof (2018-08-28),
12. 10045414 - Method and apparatus for increasing luminous intensity of an ultraviolet light emitting diode (2018-08-07),
13. 9935265 - Resistive random access memory (2018-04-03),
14. 9853214 - Resistive random access memory device with reduced power consumption (2017-12-26),
15. 9847478 - Methods and apparatus for resistive random access memory (RRAM) (2017-12-19),

Title: Innovations and Contributions of Ting-Chang Chang

Introduction

Ting-Chang Chang, based in Kaohsiung, Taiwan, is a prolific inventor, holding an impressive total of 69 patents. His work primarily focuses on advancements in semiconductor technology and materials, with significant contributions that address key challenges in the field.

Latest Patents

Among his latest innovations is the P-GaN high-electron-mobility transistor. This invention features a unique structure consisting of multiple layers: a substrate, a channel layer, a supply layer, and a series of doped layers. The design optimizes doping concentrations to enhance performance, with the gate positioned on the third doped layer, and connections made to the source and drain. Another notable patent is his method for drying a wafer at room temperature, which outlines an efficient process involving cleaning, reacting with supercritical fluids, and a pressure releasing step to ensure effective solvent removal without damaging the substrate.

Career Highlights

Ting-Chang Chang's career includes significant tenures at leading organizations, such as United Microelectronics Corporation and National Sun Yat-sen University. His role in these prestigious institutions has allowed him to contribute to cutting-edge research and development in semiconductor technologies, strengthening his portfolio of innovative solutions.

Collaborations

Collaboration has been key to Chang's success, and he has worked alongside esteemed colleagues, including Po-Tsun Liu and Kuan-Chang Chang. Together, they have explored various avenues in semiconductor physics and engineering, contributing to notable advancements in the industry.

Conclusion

Ting-Chang Chang’s extensive patent portfolio and innovative contributions place him at the forefront of technological advancements in his field. His inventions not only showcase his engineering prowess but also illustrate the critical role of collaboration in driving innovation. The continuous impact of his work serves as an inspiration for future generations of inventors and researchers in the ever-evolving landscape of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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