The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Oct. 12, 2016
Applicant:
National Sun Yat-sen University, Kaohsiung, TW;
Inventors:
Ting-Chang Chang, Kaohsiung, TW;
Kuan-Chang Chang, Kaohsiung, TW;
Tsung-Ming Tsai, Kaohsiung, TW;
Chih-Hung Pan, Kaohsiung, TW;
Po-Hsun Chen, Kaohsiung, TW;
Assignee:
National Sun Yat-Sen University, Kaohsiung, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/14 (2013.01);
Abstract
A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.