The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 19, 2022
National Sun Yat-sen University, Kaohsiung, TW;
Ting-Chang Chang, Kaohsiung, TW;
Mao-Chou Tai, Kaohsiung, TW;
Yu-Xuan Wang, Kaohsiung, TW;
Wei-Chen Huang, Kaohsiung, TW;
Ting-Tzu Kuo, Kaohsiung, TW;
Kai-Chun Chang, Kaohsiung, TW;
Shih-Kai Lin, Kaohsiung, TW;
NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;
Abstract
A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.