United Microelectronics Corp.

National Sun Yat-sen University of Kaohsiung

Taiwan Semiconductor Manufacturing Comp. Ltd.

Acer Inc.

Au Optronics Corporation

Other

Industrial Technology Research Institute

Merck Patent Gesellschaft MIT Beschrankter Haftung

National Science Council

Ting-Chang Chang

Po-Tsun Liu

Kuan-Chang Chang

Tsung-Ming Tsai

Chih-Hung Pan

Fu-Yen Jian

Yi-Shien Mor

Ying-Lang Wang

Shih-Chieh Chang

Po-Sheng Shih

Chih-Cheng Shih

Yong-En Syu

Ming-Yen Tsai

Tian-Jian Chu

Te-Chih Chen

Shih-Ching Chen

Chi-Wen Chen

Chih-Yang Lin

Du-Zen Peng

Min-Chen Chen

Wen-Chung Chen

Hua-Mao Chen

Kei-Wei Chen

Chun-Yen Chang

Hsiao-Wen Zan

Feng-Yuan Gan

Te-Ming Kung

Jung-Chih Hu

Tian-Yu Hsieh

Yu-Ching Tsao

Ming-Hui Wang

Chung-Yu Liang

Po-Hsun Chen

Chi-Wen Liu

Water Lur

Hau-Yan Lu

Kuo-Yu Huang

Chin-I Liao

Ya-Hsiang Tai

Hsiao-Yi Lin

Lih-Juann Chen

Jeng-Tzong Sheu

Ying-Min Chou

Tsung-Hsiang Shih

Chun Yen Chang

Bo-Wei Chen

Kuo-Kuang Chen

Jen-Chien Peng

Ching-Wei Chen

Wei-Chen Huang

Ying-Hao Li

Hsiao-Cheng Chiang

Wu-Chun Gau

Ming-Shiann Feng

Chun-Lin Cheng

You-Shin Lin

Yu-Xin Yang

Cheng-Jer Yang

Jing-Woei Chen

Yu-Jane Mei

Mao-Chou Tai

Chuan-Wei Kuo

Shih-Kai Lin

Chung-I Yang

Kai-Chun Chang

Ting-Tzu Kuo

Yu-Xuan Wang

Yu-Ting Su

Chih-Cheng Yang

Pei-Yu Wu

Mon-Nan How

Chih-Hao Dai

Wen-Hung Lo

Chun-Chu Lin

Yu-Lin Tsai

Po-Chun Yang

Yu-Shih Lin

Chia-Sheng Lin

Hung-Wei Li

Yu-Shan Lin

Shuo-Ting Yan

Simon-M Sze

A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

P-GaN high-electron-mobility transistor

A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

Method for drying wafer at room temperature

A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Structure to increase breakdown voltage of high electron mobility transistor

A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Method for processing a biomedical material by a supercritical fluid

A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with HS together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Method for reducing defects of electronic components by a supercritical fluid

A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400&#xb0; C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Method for bonding one component to another component

A reaction method with a homogeneous-phase supercritical fluid includes introducing a first fluid into a mixing chamber. A mass is less than or equal to that can be absorbed by the molecular sieve component, totally absorbing the first fluid by the molecular sieve component. A second fluid is introduced into the mixing chamber with a mass being greater than that can be absorbed by the molecular sieve component. A temperature and a pressure in the mixing chamber are adjusted to a critical temperature and a critical pressure of the second fluid, respectively, releasing the first fluid in supercritical phase from the molecular sieve component into the mixing chamber, followed by homogeneously mixing with the second fluid in supercritical phase in the mixing chamber to obtain a homogeneous-phase mixing fluid. The homogeneous-phase mixing fluid is then introduced into a reaction chamber connected to the mixing chamber.

Reaction method with homogeneous-phase supercritical fluid

A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.

Resistive random access memory

Methods for a resistive random access memory (RRAM) device are disclosed. A bottom electrode is formed over a substrate. A top electrode is formed over the bottom electrode. A resistive switching layer is formed interposed between the top electrode and the bottom electrode. The resistive switching is made of a composite of a metal, Si, and O, formed by oxidation of a metal silicide of a metal, co-deposition of the metal and silicon in oxygen ambiance, co-deposition of a metal oxide of the metal and silicon, or co-deposition of a metal oxide of the metal and silicon oxide. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.

Methods for resistive random access memory (RRAM)

A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.

Gas detection module and gas sensor thereof

A thin film includes a substrate, a bottom gate, a channel layer, a source and a drain, and a top gate. The bottom gate is disposed on the substrate. The channel layer is disposed on the bottom gate. The source and the drain are disposed on two different sides of the channel layer. The top gate is disposed on the channel layer, wherein the channel layer is disposed between the bottom gate and the top gate, and the bottom gate and the top gate are electrically isolated from each other. A related method is also provided.

Thin film transistor and operating method thereof

A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate. When the temperature sensor detects that the temperature of the ultraviolet light emitting diode reaches a working temperature, the controller supplies electricity to the ultraviolet light emitting diode to make the ultraviolet light emitting diode emit ultraviolet light.

Method and apparatus for increasing luminous intensity of an ultraviolet light emitting diode

A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.

A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.

Resistive random access memory device with reduced power consumption

Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.

Methods and apparatus for resistive random access memory (RRAM)

Growing community of inventors

Kaohsiung, Taiwan

Ting-Chang Chang