The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Dec. 18, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ting-Chang Chang, Kaohsiung, TW;
Yong-En Syu, Tainan, TW;
Fu-Yen Jian, Kaohsiung, TW;
Shih-Chieh Chang, Taipei, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods for a resistive random access memory (RRAM) device are disclosed. A bottom electrode is formed over a substrate. A top electrode is formed over the bottom electrode. A resistive switching layer is formed interposed between the top electrode and the bottom electrode. The resistive switching is made of a composite of a metal, Si, and O, formed by oxidation of a metal silicide of a metal, co-deposition of the metal and silicon in oxygen ambiance, co-deposition of a metal oxide of the metal and silicon, or co-deposition of a metal oxide of the metal and silicon oxide. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.