Tokyo, Japan

Tatsunori Murata

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Dowa Metaltech Co., Ltd.. Active years: 2007-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsunori Murata. Retrieved from https://idiyas.com/inventor/tatsunori-murata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 2.4

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Takarazuka, JP (2007 - 2009)
  • Chiyoda-ku, JP (2010)
  • Kawasaki, JP (2013)
  • Kawasaki-shi, JP (2014)
  • Kanagawa, JP (2011 - 2019)
  • Tokyo, JP (2010 - 2020)

Company Filing History:


Years Active: 2007-2020

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Hydrogen Plasma Processing
Insulating Film
Autofocus Improvement
Memory Element
Current Drive Capability
Columnar Laminate
Via Formation
Electrical Connector
24 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Tatsunori Murata in Semiconductor and Plating Technologies

Introduction: Tatsunori Murata is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor devices and tin-plated products. With a remarkable portfolio of 24 patents, Murata has established himself as an influential figure in the field of technology.

Latest Patents: Among his latest innovations, Murata's patent on the "Tin-plated product and method for producing same" stands out. This invention involves a unique tin-plated product where a copper or copper alloy substrate is effectively enhanced with a nickel or copper-nickel alloy underlying layer. The outermost layer consists of a sophisticated structure with a copper-tin alloy layer and strategically arranged tin layers, achieving an area ratio of 20 to 80%. Additionally, his method of manufacturing a semiconductor device focuses on improving performance through a multi-layer insulating film process. This innovative approach utilizes CVD and PECVD techniques to create an efficient trench and insulating system within semiconductor manufacturing.

Career Highlights: Murata has had a distinguished career, with significant tenures at prominent companies such as Renesas Electronics Corporation and Renesas Technology Corporation. His work in these organizations has been pivotal in the development of cutting-edge technologies within the semiconductor and plating industries.

Collaborations: Throughout his career, Murata has collaborated with esteemed colleagues, including Mikio Tsujiuchi and Takahiro Maruyama. These partnerships have enabled the successful realization of various innovative projects, further enhancing the technological landscape.

Conclusion: Tatsunori Murata’s contributions to innovation, particularly in the realm of semiconductor devices and plating techniques, continue to impact the industry. His extensive patent portfolio reflects his commitment to advancing technology, making him a valuable figure in Japan’s innovation ecosystem.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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