The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Aug. 27, 2010
Keisuke Tsukamoto, Kanagawa, JP;
Shinya Hirano, Kanagawa, JP;
Yuichiro Fujiyama, Kanagawa, JP;
Tatsunori Murata, Kanagawa, JP;
Keisuke Tsukamoto, Kanagawa, JP;
Shinya Hirano, Kanagawa, JP;
Yuichiro Fujiyama, Kanagawa, JP;
Tatsunori Murata, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.