The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Dec. 30, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01); H01L 21/311 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); G03F 9/7026 (2013.01); H01L 21/0274 (2013.01); H01L 21/0276 (2013.01); H01L 21/268 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/76805 (2013.01);
Abstract
In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.