The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jun. 30, 2010
Applicants:
Tatsunori Murata, Kanagawa, JP;
Yoshihiro Miyagawa, Kanagawa, JP;
Inventors:
Tatsunori Murata, Kanagawa, JP;
Yoshihiro Miyagawa, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In stepa semiconductor substrate is exposed to monosilane (SiH). Then, in stepthe remaining monosilane (SiH) is emitted. In stepthe semiconductor substrate is exposed to nitrous oxide plasma. A desired silicon oxide film is formed by repeating one cycle including stepstountil a necessary thickness of the film is obtained.