Renesas Electronics Corporation

Renesas Technology Corp.

Yazaki Corporation

Dowa Metaltech Co., Ltd.

Tatsunori Murata

Mikio Tsujiuchi

Yasumichi Suzuki

Takahiro Nakamura

Takahiro Maruyama

Koyu Asai

Satoshi Shimizu

Tadashi Yamaguchi

Akira Sugawara

Kiyoteru Kobayashi

Ryoji Matsuda

Mahito Sawada

Hideki Endo

Hideki Ohsumi

Tetsuo Kato

Masatoshi Nakamura

Masahiro Tadokoro

Hiroto Narieda

Takuya Hagiwara

Kazuhito Ichinose

Hirotaka Kotani

Yuta Sonoda

Keisuke Tsukamoto

Kotaro Horikoshi

Yuki Koide

Akifumi Onodera

Yoshihiro Miyagawa

Jyun Toyoizumi

Kotaro Kihara

Shinya Hirano

Yuichiro Fujiyama

Hiroaki Iuchi

In a tin-plated product wherein a surface of a substrateof copper or a copper alloy is plated with tin, an underlying layerof at least one of nickel and a copper-nickel alloy is formed on the surface of the substrate, and an outermost layer formed on the surface of the underlying layeris composed of a copper-tin alloy layerand tin layers, the copper-tin alloybeing formed of a large number of crystal grains of a copper-tin alloy, each of the tin layersbeing arranged in a corresponding one of recessed portions, each of which is formed between adjacent crystal grains of the large number of crystal grains of the copper-tin alloy, the adjacent crystal grains being adjacent to each other on the outermost surface of the outer most layer, the area ratio occupied by the tin layerson the outermost surface being 20 to 80%, and the maximum thickness of the tin layersbeing smaller than the average particle diameter of the crystal grains of the copper-tin alloy.

Tin-plated product and method for producing same

An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an Ogas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an Ogas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Method of manufacturing semiconductor device

Hydrogen plasma processing is performed on a semiconductor wafer having a wiring formed in a region except a photodiode formation region of a pixel part and in a peripheral circuit part, from the side of a face where the wiring is formed. The hydrogen plasma processing uses a plasma etching apparatus which applies high-frequency power to an upper electrode for exciting hydrogen plasma and applies high-frequency power to a lower electrode for supplying hydrogen ions existing in the hydrogen plasma to the semiconductor wafer by electric field drift. Thereby, in the photodiode formation region of the pixel part, hydrogen ions become likely to be supplied by the electric field drift, and, in the region except the photodiode formation region and in the peripheral circuit part, the wiring restricts the movement of hydrogen ions and hydrogen ions become difficult to be supplied.

Manufacturing method of using hydrogen plasma processing on a semiconductor wafer

In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.

Method of semiconductor manufacture utilizing layer arrangement to improve autofocus

An electrical connector connecting a male connector and a female connector in a freely engageable and detachable manner includes, a male tab is provided at the male connector; a housing part where the male tab is inserted is provided at the female connector; a contact piece and a beat piece to hold and press the male tab to enable electrical connection are provided at the housing part; and a protrusion is provided at least at one of the contact piece and the beat piece, and a recessed part capable of accepting the protrusion is provided at the male tab, wherein the contact piece, the beat piece, and the protrusion are constituted to be one component.

Electrical connector and manufacturing method thereof

An n-channel MISFETQn is formed in an nMIS first formation region of a semiconductor substrate and a p-channel MISFETQp is formed in an adjacent pMIS second formation region of the semiconductor substrate. A silicon nitride film having a tensile stress is formed to cover the n-channel MISFETQn and the p-channel MISFETQp. In one embodiment, the silicon nitride film in the nMIS formation region and the pMIS formation region is irradiated with ultraviolet rays. Thereafter, a mask layer is formed to cover the silicon nitride film in the nMIS formation region and to expose the silicon nitride film in the pMIS formation region. The silicon nitride film in the pMIS formation region is then subjected to plasma processing, which relieves the tensile stress of the silicon nitride film in the pMIS formation region.

Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof

A process for burying a tungsten member into a blind hole formed in a wafer, in which blind hole a through via is to be made. Film-formation (for forming the tungsten member) is carried out to position, at the periphery of the wafer, the outer circumference of the tungsten member inside the outer circumference of a barrier metal beneath the tungsten film. This process makes it possible to bury the tungsten member, which may be relatively thin, into the blind hole, which may be relatively large, so as to decrease a warp of the wafer and further prevent an underlying layer beneath the tungsten member from being peeled at the periphery of the wafer.

Method of forming a via in a semiconductor device

Over a semiconductor substrate, a silicon nitride film is formed so as to cover n-channel MISFETs. The silicon nitride film is a laminate film which may be made of first, second, and third silicon nitride films. The total film thickness of the first and second silicon nitride films is smaller than half a spacing between a first sidewall spacer and a second sidewall spacer. After being deposited, the first and second silicon nitride films are subjected to treatments to have increased tensile stresses. The total film thickness of the first, second, and third silicon nitride films is not less than half the spacing between the first and second sidewall spacers. The third silicon nitride film is not subjected to any tensile-stress-increasing treatment, or may be subjected to a lesser amount of such treatment.

Semiconductor device having insulating film with increased tensile stress and manufacturing method thereof

There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.

Semiconductor device and method of manufacturing the same

To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NHbut composed of SiH/N/helium (He). The film forming temperature is set at from 200 to 350&#xb0; C. More ideally, a flow rate ratio of He to SiHis set at from 100 to 125.

Manufacturing method of semiconductor device having memory element with protective film

The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NHor Has pretreatment. Thereafter, a tensile stress silicon nitride film to impose tensile stress on an MTJ device is formed over a clad layer and over an interlayer dielectric film where the clad layer is not formed. Successively, a compressive stress silicon nitride film to impose compressive stress on the MTJ device is formed over the tensile stress silicon nitride film. The conditions for forming the tensile stress silicon nitride film and the compressive stress silicon nitride film are as follows: a parallel plate type plasma CVD apparatus is used; the RF power is set in the range of 0.03 to 0.4 W/cm; and the film forming temperature is set in the range of 200&#xb0; C. to 350&#xb0; C.

Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In stepa semiconductor substrate is exposed to monosilane (SiH). Then, in stepthe remaining monosilane (SiH) is emitted. In stepthe semiconductor substrate is exposed to nitrous oxide plasma. A desired silicon oxide film is formed by repeating one cycle including stepstountil a necessary thickness of the film is obtained.

Manufacturing method of semiconductor device for enhancing the current drive capability

Growing community of inventors

Tokyo, Japan

Tatsunori Murata