Tadashi Shibata

Title: The Innovations of Tadashi Shibata

Introduction

Tadashi Shibata is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents involves a semiconductor device that features a semiconductor substrate, with a source and a drain region formed at its surface. Each of these regions has a potential barrier with respect to the substrate. A gate electrode is positioned between the source and drain regions, controlling the height of discrete energy levels of carriers within the substrate. This design allows for a conduction state and a non-conduction state based on the presence or absence of resonant tunneling current flow. Another notable patent describes a manufacturing method for a semiconductor device, where a concave portion with a V-shaped cross-section is created in a contact region of a p-type silicon substrate. This region is defined by a hole in an insulative layer over the substrate, and an n-type diffusion layer surrounds the concave portion, connecting to a drain region of a FET.

Career Highlights

Throughout his career, Tadashi Shibata has worked with notable companies such as Tokyo Shibaura Denki and Toshiba Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Tadashi has collaborated with esteemed colleagues, including Kei Kurosawa and Kiyoshi Urui. Their combined expertise has fostered an environment of innovation and creativity in their projects.

Conclusion

Tadashi Shibata's contributions to semiconductor technology are noteworthy, with a solid portfolio of patents that reflect his innovative spirit. His work continues to influence the industry and pave the way for future advancements.