The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Jul. 23, 1996
Applicant:
Inventor:
Tadashi Shibata, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 25 ; 257327 ; 257401 ;
Abstract
A semiconductor device has a semiconductor substrate, a source and a drain region, each formed at the surface of said semiconductor substrate, and each having a potential barrier with respect to the semiconductor substrate. A gate electrode is formed on the semiconductor substrate and positioned between the source and drain regions. The gate electrode controls the height of discrete energy levels of carriers of said semiconductor substrate, and provides a conduction state and a non-conduction state depending upon the existence or non-existence of resonant tunneling current flow.